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EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP
被引:523
作者
:
YIM, WM
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
YIM, WM
[
1
]
STOFKO, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
STOFKO, EJ
[
1
]
ZANZUCCHI, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ZANZUCCHI, PJ
[
1
]
PANKOVE, JI
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
PANKOVE, JI
[
1
]
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
ETTENBERG, M
[
1
]
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
GILBERT, SL
[
1
]
机构
:
[1]
RCA LABS, DAVID SARNOFF RES CTR, PRINCETON, NJ 08540 USA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1973年
/ 44卷
/ 01期
关键词
:
D O I
:
10.1063/1.1661876
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:292 / 296
页数:5
相关论文
共 34 条
[11]
ENERGY BAND STRUCTURE OF AIN
HEJDA, B
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physics, Czechoslovak Academy of Sciences
HEJDA, B
[J].
PHYSICA STATUS SOLIDI,
1969,
32
(01):
: 407
-
&
[12]
KANER E, 1957, Z NATURFORSCH, VA12, P942
[13]
LAGRENAUDIE J, 1956, J CHIM PHYS PCB, V53, P222
[14]
ALUMINUM NITRIDE, A REFRACTORY FOR ALUMINUM TO 2000-DEGREE-C
LONG, G
论文数:
0
引用数:
0
h-index:
0
LONG, G
FOSTER, LM
论文数:
0
引用数:
0
h-index:
0
FOSTER, LM
[J].
JOURNAL OF THE AMERICAN CERAMIC SOCIETY,
1959,
42
(02)
: 53
-
59
[15]
FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP
LORENZ, MR
论文数:
0
引用数:
0
h-index:
0
LORENZ, MR
CHICOTKA, R
论文数:
0
引用数:
0
h-index:
0
CHICOTKA, R
PETTIT, GD
论文数:
0
引用数:
0
h-index:
0
PETTIT, GD
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
DEAN, PJ
[J].
SOLID STATE COMMUNICATIONS,
1970,
8
(09)
: 693
-
&
[16]
USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
MANASEVIT, HM
ERDMANN, FM
论文数:
0
引用数:
0
h-index:
0
ERDMANN, FM
SIMPSON, WI
论文数:
0
引用数:
0
h-index:
0
SIMPSON, WI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
: 1864
-
+
[17]
PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN
MARUSKA, HP
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
MARUSKA, HP
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
TIETJEN, JJ
[J].
APPLIED PHYSICS LETTERS,
1969,
15
(10)
: 327
-
&
[18]
CONDUCTION BAND MINIMA IN ALAS AND ALSB
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
SPITZER, WC
论文数:
0
引用数:
0
h-index:
0
SPITZER, WC
[J].
PHYSICAL REVIEW LETTERS,
1963,
11
(08)
: 358
-
&
[19]
DETERMINATION OF BAND GAP AND REFRACTIVE INDEX OF AIP FROM OPTICAL ABSORPTION
MONEMAR, B
论文数:
0
引用数:
0
h-index:
0
MONEMAR, B
[J].
SOLID STATE COMMUNICATIONS,
1970,
8
(16)
: 1295
-
&
[20]
GROWTH CHARACTERISTICS OF A1N FILMS PYROLYTICALLY DEPOSITED ON SI
NOREIKA, AJ
论文数:
0
引用数:
0
h-index:
0
NOREIKA, AJ
ING, DW
论文数:
0
引用数:
0
h-index:
0
ING, DW
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(12)
: 5578
-
&
←
1
2
3
4
→
共 34 条
[11]
ENERGY BAND STRUCTURE OF AIN
HEJDA, B
论文数:
0
引用数:
0
h-index:
0
机构:
Institute of Physics, Czechoslovak Academy of Sciences
HEJDA, B
[J].
PHYSICA STATUS SOLIDI,
1969,
32
(01):
: 407
-
&
[12]
KANER E, 1957, Z NATURFORSCH, VA12, P942
[13]
LAGRENAUDIE J, 1956, J CHIM PHYS PCB, V53, P222
[14]
ALUMINUM NITRIDE, A REFRACTORY FOR ALUMINUM TO 2000-DEGREE-C
LONG, G
论文数:
0
引用数:
0
h-index:
0
LONG, G
FOSTER, LM
论文数:
0
引用数:
0
h-index:
0
FOSTER, LM
[J].
JOURNAL OF THE AMERICAN CERAMIC SOCIETY,
1959,
42
(02)
: 53
-
59
[15]
FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP
LORENZ, MR
论文数:
0
引用数:
0
h-index:
0
LORENZ, MR
CHICOTKA, R
论文数:
0
引用数:
0
h-index:
0
CHICOTKA, R
PETTIT, GD
论文数:
0
引用数:
0
h-index:
0
PETTIT, GD
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
DEAN, PJ
[J].
SOLID STATE COMMUNICATIONS,
1970,
8
(09)
: 693
-
&
[16]
USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
MANASEVIT, HM
ERDMANN, FM
论文数:
0
引用数:
0
h-index:
0
ERDMANN, FM
SIMPSON, WI
论文数:
0
引用数:
0
h-index:
0
SIMPSON, WI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
: 1864
-
+
[17]
PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN
MARUSKA, HP
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
MARUSKA, HP
TIETJEN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
TIETJEN, JJ
[J].
APPLIED PHYSICS LETTERS,
1969,
15
(10)
: 327
-
&
[18]
CONDUCTION BAND MINIMA IN ALAS AND ALSB
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
SPITZER, WC
论文数:
0
引用数:
0
h-index:
0
SPITZER, WC
[J].
PHYSICAL REVIEW LETTERS,
1963,
11
(08)
: 358
-
&
[19]
DETERMINATION OF BAND GAP AND REFRACTIVE INDEX OF AIP FROM OPTICAL ABSORPTION
MONEMAR, B
论文数:
0
引用数:
0
h-index:
0
MONEMAR, B
[J].
SOLID STATE COMMUNICATIONS,
1970,
8
(16)
: 1295
-
&
[20]
GROWTH CHARACTERISTICS OF A1N FILMS PYROLYTICALLY DEPOSITED ON SI
NOREIKA, AJ
论文数:
0
引用数:
0
h-index:
0
NOREIKA, AJ
ING, DW
论文数:
0
引用数:
0
h-index:
0
ING, DW
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(12)
: 5578
-
&
←
1
2
3
4
→