RADIATION-DAMAGE IN ION-IMPLANTED GAP AND GAAS0.6P0.4

被引:1
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ROTHEMUND, W
FRITZSCHE, CR
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10.1063/1.90413
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O59 [应用物理学];
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页码:435 / 437
页数:3
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APPLIED PHYSICS, 1976, 10 (02) :111-119
[13]   CHANNELING MEASUREMENTS OF DAMAGE IN ION BOMBARDED SEMICONDUCTORS AT 50DEGREESK [J].
THOMPSON, DA ;
WALKER, RS .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (01) :37-46