HREM INVESTIGATIONS OF THE AGGLOMERATION OF SELF-INTERSTITIALS IN SILICON

The initial stages of the formation of rod-like defects (RLD) in FZ silicon (n-type as well as p-type Si) are investigated by high-resolution electron microscopy (HREM). These defect represent a special type of agglomeration of self-interstitials on {113} planes. As possible sites of their nucleation, interstitial-type clusters are generated by ion implantation (B+, Si+). For their further growth self-interstitials are created by electron irradiation (400 keV) at room temperature. The HREM investigations show that the early stages of RLDs and their further growth are influenced by point defect and impurity clusters existing in the Si bulk.