ROD-LIKE DEFECTS IN SILICON - COESITE OR HEXAGONAL SILICON

The crystallographic nature of rod-like defects in silicon, as observed by high resolution electron microscopy after low temperature annealings of high oxygen content Czochralski silicon, ion implantation, or electron irradiation is discussed. The interpretation of the HREM images of the rod-like defects is critically examined in view of the two models recently proposed in the literature, i. e. , hexagonal silicon or coesite SiO//2 precipitates. It is shown that the interpretation as hexagonal silicon instead of coesite precipitates is very favourable.