GAMMA-BAND AND X-BAND CONTRIBUTIONS TO NONRESONANT TUNNELING IN GAAS/AL0.35GA0.65AS DOUBLE QUANTUM WELLS

被引：19

作者：

ALEXANDER, MGW ^{[1
]}

NIDO, M ^{[1
]}

REIMANN, K ^{[1
]}

RUHLE, WW ^{[1
]}

KOHLER, K ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-7800 FREIBURG,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 24期

关键词：

D O I：

10.1063/1.101994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2517 / 2519

页数：3

共 27 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] TIME-RESOLVED MEASUREMENTS OF TUNNELING BETWEEN DOUBLE QUANTUM WELLS IN IN0.53GA0.47AS/INP [J].

ALEXANDER, MGW ;

RUHLE, WW ;

SAUER, R ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1989, 55 (09) :885-887

[3] OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS [J].

BONNEFOI, AR ;

MCGILL, TC ;

BURNHAM, RD ;

ANDERSON, GB .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :344-346

[4] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J].

CAPASSO, F ;

MOHAMMED, K ;

CHO, AY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1853-1869

[5] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[6] A BIRDS-EYE-VIEW ON THE EVOLUTION OF SEMICONDUCTOR SUPERLATTICES AND QUANTUM-WELLS [J].

ESAKI, L .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1611-1624

[7] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[8] SUBPICOSECOND REAL-SPACE CHARGE-TRANSFER IN TYPE-II GAAS/ALAS SUPERLATTICES [J].

FELDMANN, J ;

SATTMANN, R ;

GOBEL, EO ;

KUHL, J ;

HEBLING, J ;

PLOOG, K ;

MURALIDHARAN, R ;

DAWSON, P ;

FOXON, CT .

PHYSICAL REVIEW LETTERS, 1989, 62 (16) :1892-1895

[9] CURRENT-VOLTAGE CHARACTERISTICS THROUGH GAAS ALGAAS GAAS HETEROBARRIERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HASE, I ;

KAWAI, H ;

KANEKO, K ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) :3792-3797

[10] PRESSURE-DEPENDENCE OF 4F LEVELS IN EUROPIUM PENTAPHOSPHATE UP TO 400-KBAR [J].

HUBER, G ;

SYASSEN, K ;

HOLZAPFEL, WB .

PHYSICAL REVIEW B, 1977, 15 (11) :5123-5128

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