RECOMBINATION PROCESSES IN QUANTUM WELL LASERS WITH SUPERLATTICE BARRIERS

被引：2

作者：

BLOOD, P

FLETCHER, ED

FOXON, CT

GRIFFITHS, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 23期

关键词：

D O I：

10.1063/1.102023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2380 / 2382

页数：3

共 10 条

[1] SHORT-PERIOD (ALAS)(GAAS) SUPERLATTICE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BLOOD, P ;

FLETCHER, ED ;

FOXON, CT .

APPLIED PHYSICS LETTERS, 1988, 53 (04) :299-301

[2] EMISSION WAVELENGTH OF ALGAAS-GAAS MULTIPLE QUANTUM-WELL LASERS [J].

BLOOD, P ;

FLETCHER, ED ;

HULYER, PJ ;

SMOWTON, PM .

APPLIED PHYSICS LETTERS, 1986, 48 (17) :1111-1113

[3] TEMPERATURE-DEPENDENCE OF SPONTANEOUS EMISSION IN GAAS-ALGAAS QUANTUM WELL LASERS [J].

BLOOD, P ;

KUCHARSKA, AI ;

FOXON, CT ;

GRIFFITHS, K .

APPLIED PHYSICS LETTERS, 1989, 55 (12) :1167-1169

[4] INFLUENCE OF BROADENING AND HIGH-INJECTION EFFECTS ON GAAS-ALGAAS QUANTUM WELL LASERS [J].

BLOOD, P ;

COLAK, S ;

KUCHARSKA, AI .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1593-1604

[5] INFLUENCE OF THE BARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS ALGAAS QUANTUM WELL LASERS [J].

BLOOD, P ;

FLETCHER, ED ;

WOODBRIDGE, K ;

HEASMAN, KC ;

ADAMS, AR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1459-1468

[6]

Blood P., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V861, P61, DOI 10.1117/12.943409

[7] OBSERVATIONS OF BARRIER RECOMBINATION IN GAAS-ALGAAS QUANTUM WELL STRUCTURES [J].

BLOOD, P ;

TSUI, ESM ;

FLETCHER, ED .

APPLIED PHYSICS LETTERS, 1989, 54 (22) :2218-2220

[8] SHORT-PERIOD GAAS-ALAS SUPERLATTICES - OPTICAL-PROPERTIES AND ELECTRONIC-STRUCTURE [J].

MOORE, KJ ;

DUGGAN, G ;

DAWSON, P ;

FOXON, CT .

PHYSICAL REVIEW B, 1988, 38 (08) :5535-5542

[9] OPTIMIZING THE PERFORMANCE OF ALGAAS GRADED INDEX SEPARATE CONFINING HETEROSTRUCTURE QUANTUM-WELL LASERS [J].

SHEALY, JR .

APPLIED PHYSICS LETTERS, 1987, 50 (23) :1634-1636

[10] INFLUENCE OF BULK NONRADIATIVE RECOMBINATION IN WIDE BAND-GAP REGIONS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS-ALXGA1-XAS DH LASERS [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :245-248

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