ADSORPTION ON A DOUBLE-LAYER OF GE ON SI(111) STUDIED WITH X-RAY STANDING WAVES

被引：6

作者：

ZEGENHAGEN, J ^{[1
]}

PATEL, JR ^{[1
]}

FONTES, E ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

关键词：

D O I：

10.1016/0169-4332(92)90467-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A double layer of Ge on Si(111) is used as substrate for adsorption of Ga and Pb. With X-ray standing waves we analyse the Ga and Pb overlayer structure as well as overlayer-induced structural changes in the Ge bilayer as a function of adsorbate coverage.

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页码：505 / 512

页数：8

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