A NOVEL SI-CONTAINING COPOLYMER FOR A RESIST HIGHLY ETCHING-RESISTANT TO OXYGEN PLASMA

被引：3

作者：

CHIANG, WY

LU, JY

机构：

[1] Department of Chemical Engineering, Tatung Institute of Technology, Taipei, 10415, 40 Chungshan North Road

来源：

ANGEWANDTE MAKROMOLEKULARE CHEMIE | 1993年 / 209卷

关键词：

D O I：

10.1002/apmc.1993.052090103

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

A new copolymer, poly(maleimide-alt-trimethylvinylsilane) (PMVS), with a high silicon content was synthesized by free-radical copolymerization, in order to obtain a positive photoresist containing diazonaphthoquinone sulfonate as a dissolution inhibitor. PMVS shows a high etching selectivity of 1 : 16 compared to a commercially available, hard-baked photoresist (HPR-204). In addition, the rigid cyclic maleimide group is responsible for high temperature stability.

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页码：25 / 32

页数：8

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