THE SYNTHESIS AND LITHOGRAPHIC EVALUATION OF A NEW ORGANO-SILICON NOVOLAC-BASED RESIST

A novel material, bis(trimethylsilymethoxy resorcinol) was synthesized by a phenoxide alkylation method. The new substituted resorcinol was then terpolymerized with 2-methyl resorcinol and formaldehyde. We evaluated the preparation of this new polymer in terms of feed ratio of the reactants, reaction time, and temperature, and prepared a series of materials with different silicon content. Polymers which retained base solubility at high silicon content were blended with a dissolution inhibitor, and studied for their lithographic capabilities as positive, photo- or electron-beam bilevel resists. When used in a photoresist formulation a dose of 120 mJ/cm2 allowed formation of submicron features.