TURN-OFF CHARACTERISTICS OF P-N-P-N DEVICES

被引：7

作者：

YANG, ES

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 09期

关键词：

D O I：

10.1016/0038-1101(67)90007-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：927 / +

页数：1

共 10 条

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ALDRICH, RW ;

HOLONYAK, N .

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[2]

GENTRY FE, 1964, SEMICONDUCTOR CONTRO, P135

[3] CRITIQUE OF THEORY OF P-N-P-N DEVICES [J].

GIBBONS, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (09) :406-&

[4] TURN-OFF GAIN IN P-N-P-N TRIODES [J].

GOLDEY, JM ;

MACKINTOSH, IM ;

ROSS, IM .

SOLID-STATE ELECTRONICS, 1961, 3 (02) :119-122

[5] THE ELECTRICAL CHARACTERISTICS OF SILICON P-N-P-N TRIODES [J].

MACKINTOSH, IM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1229-1235

[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[7]

SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[8] GATE TURN-OFF IN P-N-P-N DEVICES [J].

WOLLEY, ED .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) :590-&

[9]

YANG ES, TO BE PUBLISHED

[10]

1964, GENERAL ELECTRIC TRA, P393

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