DEFECT ENGINEERING OF P+-JUNCTIONS BY MULTIPLE-SPECIES ION-IMPLANTATION

被引：18

作者：

CURRENT, MI

INOUE, M

NAKASHIMA, S

OHNO, N

KURIBARA, M

MATSUNAGA, Y

HARA, T

WAGNER, D

LEUNG, S

ADIBI, B

LECOURAS, G

LARSON, LA

PRUSSIN, S

机构：

[1] MATSUSHITA ELECT IND CO LTD,KYOTO RES LAB,KYOTO 601,JAPAN

[2] KAWASAKI STEEL,DIV LSI,TECHNOL SECT,UTSUNOMIYA 166,JAPAN

[3] THERMA WAVE INC,SAKITAMA GYODA CITY 361,JAPAN

[4] HOSEI UNIV,TOKYO 184,JAPAN

[5] APPL MAT INC,SANTA CLARA,CA 95054

[6] SEMATECH,AUSTIN,TX 78741

[7] OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN

[8] TRW CO INC,REDONDO BEACH,CA 90278

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 74卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95038-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Compound implants using Si and F pre-implants with B and BF2 doping implants are investigated for B and F diffusion effects and residual defect levels. Physical methods (RBS, SIMS, SRP) are combined with optical scanning and depth profiling techniques (TW, PAD, Raman) to investigate the insights to be gained from use of a fuller set of characterization tools for defect engineering.

引用

页码：175 / 180

页数：6

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