DEPTH PROFILES OF SECONDARY DEFECTS OF AS+ AND BF2+ IMPLANTED SILICON MEASURED BY A THERMAL WAVE TECHNIQUE

被引：6

作者：

ISHIKAWA, K

YOSHIDA, M

INOUE, M

机构：

来源：

关键词：

D O I：

10.1016/0168-583X(89)90194-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：317 / 320

页数：4

共 7 条

[1]

CEROFOLINI GF, 1985, 13TH P INT C DEF SEM, P525

[2]

CSEPREGI L, 1976, RADIAT EFF, V28, P277

[3] A STUDY OF ATOMIC AND MOLECULAR ARSENIC ION-IMPLANTED SILICON [J].

DELFINO, M ;

SADANA, DK ;

MORGAN, AE .

JONES, KS ;

PRUSSIN, S ;

WEBER, ER .

[5] ANODIC FORMATION OF OXIDE FILMS ON SILICON [J].

SCHMIDT, PF ;

MICHEL, W .

[6] ION IMPLANT MONITORING WITH THERMAL WAVE TECHNOLOGY [J].

SMITH, WL ;

ROSENCWAIG, A ;

WILLENBORG, DL .

[7]

SMITH WL, 1985, P SOC PHOTO-OPT INST, V530, P188, DOI 10.1117/12.946486