A STUDY OF ATOMIC AND MOLECULAR ARSENIC ION-IMPLANTED SILICON

被引：3

作者：

DELFINO, M ^{[1
]}

SADANA, DK ^{[1
]}

MORGAN, AE ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 09期

关键词：

D O I：

10.1149/1.2109044

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1900 / 1905

页数：6

共 10 条

[1]

Chu W. K., 1978, BACKSCATTERING SPECT

[2] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].

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[3]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[4]

RYSSEL H, 1974, ION IMPLANTATION SEM

[5] ENHANCED DIFFUSION DURING IMPLANTATION OF ARSENIC IN SILICON [J].

SCHWETTMANN, FN .

APPLIED PHYSICS LETTERS, 1973, 22 (11) :570-572

[6] SECONDARY ION MASS-SPECTROMETRY - DEPTH PROFILING OF SHALLOW AS IMPLANTS IN SILICON AND SILICON DIOXIDE [J].

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[7] THE CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN SILICON [J].

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[8] GENERATION OF RADIATION-INDUCED DEFECTS AT ROOM-TEMPERATURE IN SILICON IN A HVEM AND THEIR ANNIHILATION [J].

WERNER, P ;

PASEMANN, M .

ULTRAMICROSCOPY, 1982, 7 (03) :267-276

[9] COMPARISON OF SOURCES OF BORON, PHOSPHORUS, AND ARSENIC IONS [J].

WILSON, RG ;

JAMBA, DM .

APPLIED PHYSICS LETTERS, 1973, 22 (04) :176-179

[10] DIRECT EVIDENCE OF ARSENIC CLUSTERING IN HIGH-DOSE ARSENIC-IMPLANTED SILICON [J].

WU, NR ;

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WASHBURN, J .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :782-784

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