DAMAGE FORMED BY ION-IMPLANTATION IN SILICON EVALUATED BY DISPLACED ATOM DENSITY AND THERMAL WAVE SIGNAL

被引：11

作者：

HARA, T

TAKAHASHI, S

HAGIWARA, H

HIYOSHI, J

SMITH, WL

WELLES, C

HAHN, SK

LARSON, L

WONG, CCD

机构：

[1] THERMA WAVE INC,FREMONT,CA 94539

[2] SILTEC INC,MENLO PK,CA 94025

[3] NATL SEMICOND CORP,SANTA CLARA,CA 95051

[4] INTEGRATED DEVICE TECHNOL INC,SANTA CLARA,CA 95051

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 13期

关键词：

D O I：

10.1063/1.102473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1315 / 1317

页数：3

共 11 条

[1]

CHU WK, 1978, BACKSCATTERING SPECT, P21

[2]

HARA T, UNPUB

[3] TEMPORAL BEHAVIOR OF MODULATED OPTICAL REFLECTANCE IN SILICON [J].

OPSAL, J ;

TAYLOR, MW ;

SMITH, WL ;

ROSENCWAIG, A .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :240-248

[4] THERMAL AND PLASMA-WAVE DEPTH PROFILING IN SILICON [J].

OPSAL, J ;

ROSENCWAIG, A .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :498-500

[5]

OPSAL J, UNPUB

[6] THERMAL-WAVE MEASUREMENTS AND MONITORING OF TASIX SILICIDE FILM PROPERTIES [J].

SMITH, WL ;

OPSAL, J ;

ROSENCWAIG, A ;

STIMMELL, JB ;

ALLISON, JC ;

BHANDIA, AS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :710-713

[7]

SMITH WL, 1985, P SOC PHOTO-OPT INST, V530, P201, DOI 10.1117/12.946488

[8] ION IMPLANT MONITORING WITH THERMAL WAVE TECHNOLOGY [J].

SMITH, WL ;

ROSENCWAIG, A ;

WILLENBORG, DL .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :584-586

[9]

SMITH WL, 1986, SOLID STATE TECHNOL, V29, P85

[10]

SMITH WL, 1985, P SOC PHOTO-OPT INST, V530, P188, DOI 10.1117/12.946486

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