ON THE MODELING OF TUNNELLING CURRENTS IN REVERSE-BIASED P-N-JUNCTIONS

被引：77

作者：

HURKX, GAM

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(89)90146-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：665 / 668

页数：4

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[9]

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