MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB ON INP AND GAAS SUBSTRATES

[1] INFLUENCE OF THE SUBSTRATE ORIENTATION ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 743 - 748

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] GROWTH OF INSB AND INAS1-XSBX ON GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1092 - 1094

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INSB ON SI [J]. APPLIED PHYSICS LETTERS, 1989, 54 (11) : 1016 - 1018

[5] HILSUM C, 1974, ELECTRON LETT, V10

[6] DEMONSTRATION OF AN INASSB STRAINED-LAYER SUPERLATTICE PHOTODIODE [J]. APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1581 - 1583

[7] NAG BR, 1980, ELECTRON TRANSPORT C, P373

[8] INASSB STRAINED-LAYER SUPERLATTICES FOR LONG WAVELENGTH DETECTOR APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 176 - 178

[9] HETEROEPITAXIAL GROWTH OF INSB ON (100)GAAS USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (13) : 1189 - 1191

[1] INFLUENCE OF THE SUBSTRATE ORIENTATION ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 743 - 748

[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[3] GROWTH OF INSB AND INAS1-XSBX ON GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (12) : 1092 - 1094

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INSB ON SI [J]. APPLIED PHYSICS LETTERS, 1989, 54 (11) : 1016 - 1018

[5] HILSUM C, 1974, ELECTRON LETT, V10

[6] DEMONSTRATION OF AN INASSB STRAINED-LAYER SUPERLATTICE PHOTODIODE [J]. APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1581 - 1583

[7] NAG BR, 1980, ELECTRON TRANSPORT C, P373

[8] INASSB STRAINED-LAYER SUPERLATTICES FOR LONG WAVELENGTH DETECTOR APPLICATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 176 - 178

[9] HETEROEPITAXIAL GROWTH OF INSB ON (100)GAAS USING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 53 (13) : 1189 - 1191