INFLUENCE OF THE SUBSTRATE ORIENTATION ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS

被引：37

作者：

BOSE, SS

LEE, B

KIM, MH

STILLMAN, GE

WANG, WI

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.340066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：743 / 748

页数：6

相关论文

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