RUTHERFORD BACKSCATTERING AND LUMINESCENCE CHARACTERISTICS OF NEODYMIUM IMPLANTED GAP, GAAS, AND ALGAAS

被引：7

作者：

KOZANECKI, A ^{[1
]}

GROETZSCHEL, R ^{[1
]}

机构：

[1] ZENT INST KERNFORSCH ROSSENDORF,O-8051 DRESDEN,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 03期

关键词：

D O I：

10.1063/1.347264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaP, GaAs, and Al0.25Ga0.75As samples implanted with neodymium were characterized by Rutherford backscattering spectroscopy and by photoluminescence. It is shown that recrystallization of room-temperature-implanted GaP and GaAs is retarded by the presence of Nd. However, the intra-4 closed-integral shell luminescence spectra of Nd are independent of the crystalline state of GaAs. This suggests that local bonding of Nd to host lattice atoms is the basic factor determining the optical properties of Nd in GaAs. It is also shown that recrystallization of AlGaAs is only weakly affected by the presence of Nd in the layers. This shows AlGaAs:Nd to be a very promising material for optoelectronic applications.

引用

页码：1300 / 1303

页数：4

共 17 条

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