A STUDY OF THE EFFECTS OF ANNEALING, ZINC DIFFUSION AND COPPER DIFFUSION ON THE DEFECT STRUCTURE OF SILICON-DOPED GALLIUM-ARSENIDE

被引：17

作者：

HUTCHINSON, PW ^{[1
]}

BALL, RK ^{[1
]}

机构：

[1] UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1982年 / 17卷 / 02期

关键词：

D O I：

10.1007/BF00591476

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：406 / 416

页数：11

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