SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY

被引：15

作者：

CHANG, EY

LIN, KC

LIU, EH

CHANG, CY

CHEN, TH

CHEN, J

机构：

[1] HEXAWAVE PHOTON SYST INC,HSINCHU,TAIWAN

[2] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 08期

关键词：

D O I：

10.1109/55.296215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new combination of low/high/low sensitivity trilayer (PMMA/PMIPK/PMMA) resist system was used for deep UV lithography to fabricate submicron T-shaped gate. Gate length as narrow as 0.2 mum is achieved. The GaAs HEMT's with 0.3 mum T-shaped Ti/Pt/Au gate is fabricated using this technology. The HEMT demonstrated a 0.6 dB noise figure and 13 dB associated gain at 10 GHz. This deep UV lithography process provides a high throughput and low cost alternative to E-beam lithography for submicron T-gate fabrication.

引用

页码：277 / 279

页数：3

共 6 条

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