VERY LOW-NOISE HEMTS USING A 0.2-MU-M T-GATE

[1] MILLIMETER-WAVE LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 531 - 533

[2] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1032 - 1037

[3] HIGH-PERFORMANCE ALGAAS/GAAS MODFETS WITH IMPROVED OHMIC CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 712 - 716

[4] JONES WL, 1986, TRW MTD86C713014 INT

[5] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 142 - 145

[1] MILLIMETER-WAVE LOW-NOISE HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 531 - 533

[2] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1032 - 1037

[3] HIGH-PERFORMANCE ALGAAS/GAAS MODFETS WITH IMPROVED OHMIC CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 712 - 716

[4] JONES WL, 1986, TRW MTD86C713014 INT

[5] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 142 - 145