ORIENTATION DEPENDENCE OF CRYSTAL DEFECTS FORMATION IN SI MOLECULAR-BEAM EPITAXY

被引：6

作者：

HIROFUJI, Y

MATSUO, N

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583606

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：10 / 14

页数：5

共 12 条

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MATSUO N, 1984, INT C SOLID STATE DE, P56

[8] GROWTH OF DISLOCATION-FREE SILICON FILMS BY MOLECULAR-BEAM EPITAXY (MBE) [J].

SUGIURA, H ;

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[9] ETCHING OF SIO2-FILMS BY SI IN ULTRAHIGH-VACUUM [J].

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