CHARACTERIZATION OF THIN SOLID FILMS AND SURFACES BY INFRARED-SPECTROSCOPY

被引:9
作者
GROSSE, P [1 ]
机构
[1] RHEIN WESTFAL TH AACHEN, INST PHYS 1, W-5100 AACHEN, GERMANY
来源
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1991年 / 31卷
关键词
D O I
10.1007/BFb0107860
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Thin solid films and surfaces are characterized by means of IR-spectroscopy. Properties under consideration are geometric structures of layers and stacks of layers, chemical composition and incorporation of impurities, and parameters of free electrons and holes. The method is based on reflectance and transmittance measurements, in particular with polarized light at oblique incidence. Thus the interaction of the electromagnetic waves with thin films is enhanced and two independent data sets for s- and p-polarization are available. The interpretation of the measured spectra is carried out by a fit procedure, simulating the observed spectra by an adequate model. For fitting we use an ansatz of a dielectric function which is a sum of susceptibilities taking into account the contributions of valence electrons, optical phonons, free carriers, and of impurities. As examples for the method we discuss the following systems: insulating and percolating films of Ag deposited on glass, epitactic III-V-heterostructures, oxide films as used for MOS-structures, diffusion and implantation profiles, and adsorbates on metals. All examples are relevant for application in technology, as microelectronics, thin film technology, catalysis e.g. The reliability of the non-destructive IR-method is compared with other relevant analytic methods as SIMS, RBS, and AES.
引用
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页码:77 / 97
页数:21
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