CRITICAL MISORIENTATION MORPHOLOGY IN ALGAAS AND GAAS GROWN BY ATMOSPHERIC-PRESSURE MOCVD ON MISORIENTED SUBSTRATES

被引：11

作者：

JOHNSON, ES

LEGG, GE

机构：

[1] Motorola Inc, Phoenix, AZ, USA, Motorola Inc, Phoenix, AZ, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 01期

关键词：

D O I：

10.1016/S0022-0248(98)90007-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：53 / 66

页数：14

共 24 条

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[7] GROWTH OF ALGAAS AND GAAS BY ATMOSPHERIC-PRESSURE MOCVD ON LENTICULAR SUBSTRATES [J].

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