HIGH-ENERGY ELECTRON INDUCED DISPLACEMENT DAMAGE IN SILICON

[1] AKILOV YZ, 1974, SOV PHYS SEMICOND+, V8, P18

[2] BROWN RR, 1966, NAS59578 FIN REP

[3] BRUCKER GJ, 1967, MAR P C EFF RAD STRU

[4] ENERGY-DEPENDENCE OF PROTON-INDUCED DISPLACEMENT DAMAGE IN SILICON [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1276 - 1281

[5] EFFECT OF ELECTRON ENERGY ON DEFECT INTRODUCTION IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 913 - &

[6] DREVINSKY PJ, 1988, MATER RES SOC S P, V104, P167

[7] DISPLACEMENT DAMAGE AND DOSE ENHANCEMENT IN GALLIUM-ARSENIDE AND SILICON [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4382 - 4387

[8] EXPERIMENTAL AND CALCULATED RESPONSE OF A RADIOCHROMIC DYE FILM DOSIMETER TO HIGH-LET RADIATIONS [J]. RADIATION RESEARCH, 1984, 97 (01) : 1 - 15

[9] HENISCH HL, 1981, J NUCL MATER, V103, P1325

[10] RECOMBINATION LIFETIMES IN GAMMA-IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4106 - &

[1] AKILOV YZ, 1974, SOV PHYS SEMICOND+, V8, P18

[2] BROWN RR, 1966, NAS59578 FIN REP

[3] BRUCKER GJ, 1967, MAR P C EFF RAD STRU

[4] ENERGY-DEPENDENCE OF PROTON-INDUCED DISPLACEMENT DAMAGE IN SILICON [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1276 - 1281

[5] EFFECT OF ELECTRON ENERGY ON DEFECT INTRODUCTION IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 913 - &

[6] DREVINSKY PJ, 1988, MATER RES SOC S P, V104, P167

[7] DISPLACEMENT DAMAGE AND DOSE ENHANCEMENT IN GALLIUM-ARSENIDE AND SILICON [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4382 - 4387

[8] EXPERIMENTAL AND CALCULATED RESPONSE OF A RADIOCHROMIC DYE FILM DOSIMETER TO HIGH-LET RADIATIONS [J]. RADIATION RESEARCH, 1984, 97 (01) : 1 - 15

[9] HENISCH HL, 1981, J NUCL MATER, V103, P1325

[10] RECOMBINATION LIFETIMES IN GAMMA-IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4106 - &