INTERFACE-STATE GENERATION DURING AVALANCHE INJECTION OF ELECTRONS FROM SI INTO SIO2

被引：11

作者：

SUNAGA, T ^{[1
]}

LYON, SA ^{[1
]}

JOHNSON, WC ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：810 / 811

页数：2

共 15 条

[1]

CLEMENT JJ, 1977, THESIS PRINCETON U

[2]

GDULA RA, 1976, J ELECTROCHEM SOC, V42, P123

[3]

HAN CJ, 1980, NVL0059013 FIN REP

[4] RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS [J].

HU, G ;

JOHNSON, WC .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :590-591

[5]

JENQ CS, 1977, THESIS PRINCETON U

[6] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

NICOLLIA.EH ;

BERGLUND, CN ;

SCHMIDT, PF ;

ANDREWS, JM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5654-&

[7] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J].

NICOLLIAN, EH ;

GOETZBERGER, A ;

BERGLUND, CN .

APPLIED PHYSICS LETTERS, 1969, 15 (06) :174-+

[8] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J].

NICOLLIAN, EH ;

BERGLUND, CN .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3052-+

[9] THERMAL REEMISSION OF TRAPPED ELECTRONS IN SIO2 [J].

NING, TH .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5997-6003

[10] INTERFACE STATE GENERATION IN THE SI-SIO2 SYSTEM BY PHOTOINJECTING ELECTRONS FROM AN AL FIELD PLATE [J].

PANG, S ;

LYON, SA ;

JOHNSON, WC .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :709-711

← 1 2 →