INVESTIGATION INTO THE REUSE OF PMOS DOSIMETERS

被引：32

作者：

KELLEHER, A ^{[1
]}

MCDONNELL, N ^{[1
]}

ONEILL, B ^{[1
]}

LANE, W ^{[1
]}

ADAMS, L ^{[1
]}

机构：

[1] ESTEC,NOORDWIJK,NETHERLANDS

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 03期

关键词：

D O I：

10.1109/23.299782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radiation sensitive field effect transistors have applications as integrating dosimeters in spacecraft, laboratories and medicine to measure the amount of radiation dose absorbed. However these dosimeters can measure only to a maximum dose which is determined by the type and sensitivity of the RADFET being used. On reaching the maximum radiation dose these dosimeters are usually replaced. The aim of this paper is to investigate the possibility of reusable dosimeters which to-date has not been addressed in the published literature. This study examines the response of dosimeters which were irradiated, annealed back to their original preirradiation threshold voltage and then irradiated for a second time. The results of the second irradiation on suggest that reusing PMOS dosimeters is a feasible option.

引用

页码：445 / 451

页数：7

共 21 条

[1] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J].