THE MECHANISMS OF SMALL INSTABILITIES IN IRRADIATED MOS-TRANSISTORS

被引：26

作者：

HOLMESSIEDLE, A ^{[1
]}

ADAMS, L ^{[1
]}

机构：

[1] EUROPEAN SPACE AGCY,EUROPEAN SPACE RES & TECNOL CTR,2200 AG NOORDWIJK,NETHERLANDS

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4135 / 4140

页数：6

共 26 条

[1] DEVELOPMENT OF AN MOS DOSIMETRY UNIT FOR USE IN SPACE [J].

ADAMS, L ;

HOLMESSIEDLE, A .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1607-1612

[2]

AUGUST LA, 1982, IEEE T NUCL SCI, V29, P2001

[3]

BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446

[4] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J].

BOESCH, HE ;

MCLEAN, FB ;

MCGARRITY, JM ;

WINOKUR, PS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1239-1245

[5] EXPOSURE-DOSE-RATE-DEPENDENCE FOR A CMOS-SOS MEMORY [J].

BRUCKER, GJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4056-4059

[6]

DEKEERSMAECKER R, 1983, INSULATING FILMS SIL

[7] A RADIATION-INDUCED INSTABILITY IN SILICON MOS TRANSISTORS [J].

DENNEHY, WJ ;

BRUCKER, GJ ;

HOLMESSI.AG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :273-&

[8] GAMMA AND VACUUM ULTRAVIOLET IRRADIATIONS OF ION-IMPLANTED SIO2 FOR MOS DIELECTRICS [J].

EMMS, CG ;

HOLMESSIEDLE, AG ;

GROOMBRIDGE, I ;

BOSNELL, JR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :159-166

[9] SLOW AND FAST STATES INDUCED BY HOT-ELECTRONS AT SI-SIO2 INTERFACE [J].

FISCHETTI, MV ;

GASTALDI, R ;

MAGGIONI, F ;

MODELLI, A .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3136-3144

[10] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1462-1466

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