EXPOSURE-DOSE-RATE-DEPENDENCE FOR A CMOS-SOS MEMORY

被引：13

作者：

BRUCKER, GJ

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期

关键词：

D O I：

10.1109/TNS.1981.4335674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4056 / 4059

页数：4

共 8 条

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[3] ACTIVATION-ENERGIES OF THERMAL ANNEALING OF RADIATION-INDUCED DAMAGE IN NORMAL-CHANNELS AND PARA-CHANNELS OF CMOS INTEGRATED-CIRCUITS [J].

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BRASHEARS, SS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1658-1664

[4] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J].

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SANDER, HH .

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[5]

KJAR RA, 1974, IEEE T NUCL SCI, V21, P209

[6] RADIATION-INDUCED CHARGE TRAPPING AT SILICON SAPPHIRE SUBSTRATE INTERFACE [J].

NEAMEN, D ;

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :211-216

[7]

NEAMEN DA, 1978, IEEE T NUCL SCI, V25, P1160, DOI 10.1109/TNS.1978.4329507

[8] RADIATION HARDENING OF CMOS-SOS INTEGRATED-CIRCUITS [J].

SCHLESIER, KM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :152-158

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