共 17 条
[4]
AIZENBERG GE, 1993, THESIS RAND AFRIKAAN
[5]
Azzam R.M.A., 1989, ELLIPSOMETRY POLARIZ
[6]
NON-DESTRUCTIVE CHARACTERIZATION OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY
[J].
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
1989, 2 (1-3)
:131-137
[7]
RAMAN-SCATTERING DEPTH PROFILE OF THE STRUCTURE OF ION-IMPLANTED GAAS
[J].
PHYSICAL REVIEW B,
1988, 37 (09)
:4609-4617
[8]
ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF IMPLANTATION DOPED SILICON BY INFRARED REFLECTION
[J].
RADIATION EFFECTS AND DEFECTS IN SOLIDS,
1982, 60 (1-4)
:35-47
[10]
LOW-TEMPERATURE ANNEALING OF BE-IMPLANTED GAAS
[J].
JOURNAL OF APPLIED PHYSICS,
1983, 54 (06)
:3125-3128