NON-DESTRUCTIVE CHARACTERIZATION OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY

被引：9

作者：

FRIED, M

LOHNER, T

DENIJS, JMM

VANSILFHOUT, A

HANEKAMP, LJ

KHANH, NQ

LACZIK, Z

GYULAI, J

机构：

[1] TWENTE UNIV TECHNOL,DEPT APPL PHYS,ENSCHEDE,NETHERLANDS

[2] HUNGARIAN ACAD SCI,CENT RES INST PHYS,H-1525 BUDAPEST,HUNGARY

[3] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD OX1 3PH,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(89)90087-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：131 / 137

页数：7

共 19 条

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