ENHANCEMENT OF PHOTOLUMINESCENCE INTENSITY OF GAAS WITH CUBIC GAS CHEMICAL VAPOR-DEPOSITED USING A STRUCTURALLY DESIGNED SINGLE-SOURCE PRECURSOR

被引：76

作者：

MACINNES, AN

POWER, MB

BARRON, AR

JENKINS, PP

HEPP, AF

机构：

[1] HARVARD UNIV,DEPT CHEM,CAMBRIDGE,MA 02138

[2] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

[3] HARVARD UNIV,MAT RES LAB,CAMBRIDGE,MA 02138

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.108847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster [(t-Bu)GaS]4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, x-ray powder diffraction, and x-ray photoelectron and Rutherford backscattering spectroscopies.

引用

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页码：711 / 713

页数：3

相关论文

共 38 条

[1] THE 1ST STEPS OF THE SULFURIZATION OF III-V COMPOUNDS [J].

BARBOUTH, N ;

BERTHIER, Y ;

OUDAR, J ;

MOISON, JM ;

BENSOUSSAN, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) :1663-1666

[2] EFFECT OF SODIUM SULFIDE TREATMENT ON BAND BENDING IN GAAS [J].

BESSER, RS ;

HELMS, CR .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1707-1709

[3] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES [J].

CARPENTER, MS ;

MELLOCH, MR ;

LUNDSTROM, MS ;

TOBIN, SP .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2157-2159

[4] INVESTIGATIONS OF AMMONIUM SULFIDE SURFACE TREATMENTS ON GAAS [J].

CARPENTER, MS ;

MELLOCH, MR ;

COWANS, BA ;

DARDAS, Z ;

DELGASS, WN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :845-850

[5] PASSIVATION OF GAAS(001) SURFACES BY INCORPORATION OF GROUP-VI ATOMS - A STRUCTURAL INVESTIGATION [J].

CHAMBERS, SA ;

SUNDARAM, VS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2256-2262

[6] SURFACE PASSIVATION EFFECTS OF AS2S3 GLASS ON SELF-ALIGNED ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

CHUANG, HL ;

CARPENTER, MS ;

MELLOCH, MR ;

LUNDSTROM, MS ;

YABLONOVITCH, E ;

GMITTER, TJ .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2113-2115

[7] X-RAY PHOTOELECTRON-SPECTROSCOPY OF AMMONIUM SULFIDE TREATED GAAS(100) SURFACES [J].

COWANS, BA ;

DARDAS, Z ;

DELGASS, WN ;

CARPENTER, MS ;

MELLOCH, MR .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :365-367

[8] FORMATION OF S-GAAS SURFACE BONDS [J].

GEIB, KM ;

SHIN, J ;

WILMSEN, CW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :838-842

[9] ELECTROCHEMICAL SULFUR PASSIVATION OF GAAS [J].

HOU, XY ;

CAI, WZ ;

HE, ZQ ;

HAO, PH ;

LI, ZS ;

DING, XM ;

WANG, X .

APPLIED PHYSICS LETTERS, 1992, 60 (18) :2252-2254

[10]

JENKINS P, 1990, 21ST P IEEE PHOT SPE, V1, P399

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