ELECTRON-BOMBARDMENT INDUCED ANNEALING STAGES IN N-TYPE GERMANIUM-I

被引：7

作者：

HIRATA, M ^{[1
]}

机构：

[1] OSAKA UNIV,COLL GEN EDUC,DEPT PHYS,TOYONAKA,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 04期

关键词：

D O I：

10.1143/JJAP.12.577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：577 / 585

页数：9

共 12 条

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[5] INTERACTIONS OF POINT DEFECTS WITH IMPURITIES IN SILICON [J].

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[6]

HIRATA M, 1969, J PHYS SOC JAPAN, V27, P408

[7] ANNEALING OF GAMMA-RAY IRRADIATED N-TYPE GERMANIUM [J].

ISHINO, S ;

NAKAZAWA, F ;

HASIGUTI, RR .

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[9]

PIGG JC, 1964, PHYS REV, V135, P1141

[10]

Saito H., 1963, JPN J APPL PHYS, V2, P678

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