COBALT DISILICIDE (COSI2) SCHOTTKY CONTACTS TO 6H-SIC

Schottky contacts using CoSi2 to both n- and p-type 6H-SiC were fabricated The contacts revealed good rectifying characteristics after annealing at 700 degrees C. Low leakage currents and exponentially increasing currents over at least 5 decades were obtained in the forward bias mode. C-V- and I-V-measurements were used to establish the Schottky barrier heights for CoSi, to 6H-SiC, 1.05 +/- 0.05eV and 1.90 +/- 0.05eV for n- and p-type respectively. Further annealing at 900 degrees C changed the Schottky barrier heights on both n- and p-type significantly.