TIME-RESOLVED X-RAY-DIFFRACTION MEASUREMENT OF SILICON SURFACE DURING LASER IRRADIATION UNDER GRAZING-INCIDENCE CONDITIONS

被引：4

作者：

KOJIMA, S

LIU, KY

KUDO, Y

KAWADO, S

ISHIKAWA, T

MATSUSHITA, T

机构：

[1] UNIV TOKYO,FAC ENGN,BUNKYO KU,TOKYO 113,JAPAN

[2] NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY,TSUKUBA,IBARAKI 305,JAPAN

[3] GRAD UNIV ADV STUDIES,DEPT SYNCHROTRON RADIAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 10期

关键词：

TIME-RESOLVED MEASUREMENT; ND-YAG LASER; SILICON; SURFACE LATTICE DEFORMATION; OUT-OF-PLANE REFLECTION; GRAZING INCIDENCE CONDITION;

D O I：

10.1143/JJAP.33.5612

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time-resolved X-ray diffraction measurement under frequency-doubled Nd:YAG laser (lambda=0.53 mu m) irradiation was carried out using the ''out of plane'' reflections at the BL-16 (MPW-beamline) in the Photon Factory (KEK). The ''out of plane'' 333 reflection showed that the lattice expansion in the lateral direction due to the present pulsed-laser irradiation was negligible. From the skew 422 reflection at a glancing angle of 2.3 mrad, which was near the critical angle for the total reflection, the temperature rise in silicon thin surface layers (less than 75 nm) was estimated to be 210 degrees C from the shift of peak position at 50 us after laser irradiation at a laser power density of 160 mJ/cm(2).

引用

页码：5612 / 5616

页数：5

共 14 条

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