TIME RESOLVED X-RAY-DIFFRACTION STUDY OF LASER ANNEALING IN SILICON AT GRAZING-INCIDENCE

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[2] LOW-ENERGY ELECTRON-DIFFRACTION DURING PULSED LASER ANNEALING - A TIME-RESOLVED SURFACE STRUCTURAL STUDY [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (04) : 307 - 310

[3] MULTIPLE DIFFRACTION OF X-RAYS [J]. ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1982, 37 (05): : 437 - 447

[4] Larson B. C., 1984, Comments on Solid State Physics, V11, P151

[5] TIME-RESOLVED X-RAY-DIFFRACTION MEASUREMENT OF THE TEMPERATURE AND TEMPERATURE-GRADIENTS IN SILICON DURING PULSED LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 282 - 284

[6] NANOSECOND RESOLVED X-RAY DIFFRACTION DURING PULSED LASER ANNEALING OF SILICON. [J]. 1983, (208): : 1 - 3

[7] WANG JC, 1978, APPL PHYS LETT, V33, P445

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440

[2] LOW-ENERGY ELECTRON-DIFFRACTION DURING PULSED LASER ANNEALING - A TIME-RESOLVED SURFACE STRUCTURAL STUDY [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (04) : 307 - 310

[3] MULTIPLE DIFFRACTION OF X-RAYS [J]. ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1982, 37 (05): : 437 - 447

[4] Larson B. C., 1984, Comments on Solid State Physics, V11, P151

[5] TIME-RESOLVED X-RAY-DIFFRACTION MEASUREMENT OF THE TEMPERATURE AND TEMPERATURE-GRADIENTS IN SILICON DURING PULSED LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 282 - 284

[6] NANOSECOND RESOLVED X-RAY DIFFRACTION DURING PULSED LASER ANNEALING OF SILICON. [J]. 1983, (208): : 1 - 3

[7] WANG JC, 1978, APPL PHYS LETT, V33, P445