MISFIT DISLOCATION MICROSTRUCTURE AND KINETICS OF HGCDTE CDZNTE UNDER TENSILE AND COMPRESSIVE STRESS

被引:9
作者
SUGIURA, L
SHIGENAKA, K
NAKATA, F
HIRAHARA, K
机构
[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210, 1, Komukai Toshiba-cho
关键词
D O I
10.1016/0022-0248(94)91105-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The effects of interfacial lattice mismatch upon Hg1-xCdxTe epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) were investigated. HgCdTe was found to be easily affected by lattice mismatch of less than +0.1%. It has also been shown that mismatched HgCdTe layers in tension tend to deteriorate more easily than those in compression. This asymmetric phenomenon was explained using a schematic model of the lattice structure. The asymmetric phenomenon is attributable to the asymmetric dislocation distribution due to the presence of excess mercury vacancies in addition to the sign of the misfit strain and the different lattice structure.
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页码:547 / 551
页数:5
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