DIRECT PICTURE OF THE LOCAL ELECTRONIC-STRUCTURE DURING THE SI(111)7X7-AL SCHOTTKY-BARRIER FORMATION PROCESS

被引：9

作者：

KELLY, MK

MARGARITONDO, G

PAPAGNO, L

LAPEYRE, GJ

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

[2] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

[3] MONTANA STATE UNIV,DEPT PHYS,BOZEMAN,MT 59717

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.34.6011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6011 / 6013

页数：3

共 19 条

[11] RECONSTRUCTION OF ALUMINUM AND INDIUM OVERLAYERS ON SI(111) - A SYSTEMATIC STUDY WITH HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY AND LOW-ENERGY ELECTRON-DIFFRACTION
KELLY, MK
MARGARITONDO, G
ANDERSON, J
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1396 - 1399
[12] A STUDY OF AL-SI(111)-CLEAVED INTERFACE BY PHOTOEMISSION, AUGER-ELECTRON YIELD, AND AUGER-ELECTRON SPECTROSCOPIES
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[13] MICROSCOPIC INVESTIGATIONS OF SEMICONDUCTOR INTERFACES
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[J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 499 - 513
[14] MARGARITONDO G, 1984, ANNU REV MATER SCI, V14, P67
[15] SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING
MARGARITONDO, G
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[J]. PHYSICAL REVIEW B, 1976, 14 (12): : 5396 - 5403
[16] THE ELECTRONIC-STRUCTURE OF CLEAVED SILICON(111) SURFACES FOLLOWING ADSORPTION OF ALUMINUM
PARKE, AW
MCKINLEY, A
WILLIAMS, RH
SRIVASTAVA, GP
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (14): : L369 - L374
[17] INELASTIC-SCATTERING OF SLOW-ELECTRONS FROM SI(111) SURFACES
PERSSON, BNJ
DEMUTH, JE
[J]. PHYSICAL REVIEW B, 1984, 30 (10) : 5968 - 5986
[18] ELECTRON-ENERGY LOSS SPECTROSCOPY OF SI(111)-SIMPLE-METAL INTERFACE
ROWE, JE
MARGARITONDO, G
CHRISTMAN, SB
[J]. PHYSICAL REVIEW B, 1977, 15 (04) : 2195 - 2201
[19] SCHOTTKY-BARRIER HEIGHTS AND THE CONTINUUM OF GAP STATES
TERSOFF, J
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (06) : 465 - 468

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