SELF-MODULATING SB INCORPORATION IN SI/SIGE SUPERLATTICES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：9

作者：

FUJITA, K

FUKATSU, S

USAMI, N

SHIRAKI, Y

YAGUCHI, H

ITO, R

NAKAGAWA, K

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

[2] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

SURFACE SCIENCE | 1993年 / 295卷 / 03期

关键词：

D O I：

10.1016/0039-6028(93)90280-W

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Self-modulating incorporation of Sb atoms has been found in Si/SiGe superlattices grown by conventional solid source Si molecular beam epitaxy. The origin of this phenomenon has been attributed to the difference in the segregation length of Sb atoms in Si and SiGe layers. It has been found that the segregation length of Sb in Si1-xGex layers increases as the Ge composition, x, increases and that Sb atoms are incorporated mainly in Si layers when Si/SiGe superlattices are grown.

引用

收藏

页码：335 / 339

页数：5

相关论文

共 12 条

[1] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[2] INFLUENCE OF SURFACTANTS IN GE AND SI EPITAXY ON SI(001) [J].

COPEL, M ;

REUTER, MC ;

VONHOEGEN, MH ;

TROMP, RM .

PHYSICAL REVIEW B, 1990, 42 (18) :11682-11689

[3] INTERSUBBBAND ABSORPTION IN NARROW SI/SIGE MULTIPLE QUANTUM-WELLS WITHOUT INTERFACIAL SMEARING [J].

FUJITA, K ;

FUKATSU, S ;

SHIRAKI, Y ;

YAGUCHI, H ;

ITO, R .

APPLIED PHYSICS LETTERS, 1992, 61 (02) :210-212

[4] REALIZATION OF ABRUPT INTERFACES IN SI/GE SUPERLATTICES BY SUPPRESSING GE SURFACE SEGREGATION WITH SUBMONOLAYER OF SB [J].

FUJITA, K ;

FUKATSU, S ;

YAGUCHI, H ;

IGARASHI, T ;

SHIRAKI, Y ;

ITO, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (11) :L1981-L1983

[5] INTERSUBBAND ABSORPTION IN N-TYPE SI/SI1-XGEX MULTIPLE-QUANTUM-WELL STRUCTURES FORMED BY SB SEGREGANT-ASSISTED GROWTH [J].

FUJITA, K ;

FUKATSU, S ;

SHIRAKI, Y ;

YAGUCHI, H ;

ITO, R .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :416-420

[6] SELF-LIMITATION IN THE SURFACE SEGREGATION OF GE ATOMS DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

FUKATSU, S ;

FUJITA, K ;

YAGUCHI, H ;

SHIRAKI, Y ;

ITO, R .

APPLIED PHYSICS LETTERS, 1991, 59 (17) :2103-2105

[7] ATOMISTIC PICTURE OF INTERFACIAL MIXING IN THE SI/GE HETEROSTRUCTURES [J].

FUKATSU, S ;

FUJITA, K ;

YAGUCHI, H ;

SHIRAKI, Y ;

ITO, R .

SURFACE SCIENCE, 1992, 267 (1-3) :79-82

[8]

FUKATSU S, 1991, MATER RES SOC SYMP P, V220, P217, DOI 10.1557/PROC-220-217

[9] SURFACE SEGREGATION OF SB ON SI(100) DURING MOLECULAR-BEAM EPITAXY GROWTH [J].

JORKE, H .

SURFACE SCIENCE, 1988, 193 (03) :569-578

[10]

SAKAMOTO K, 1992, THIN SOLID FILMS, V222, P122