GROWTH AND CHARACTERIZATION OF INAS/GAAS MONOLAYER STRUCTURES

被引：7

作者：

FUKUI, T

机构：

[1] NTT Basic Research Lab, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90543-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：301 / 306

页数：6

共 13 条

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