GROWTH OF SINGLE-CRYSTAL COSI2 LAYERS AT ROOM-TEMPERATURE

被引：8

作者：

TUNG, RT

SCHREY, F

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90441-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：455 / 460

页数：6

共 24 条

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[7] INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION [J].

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TUNG, RT .

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[8] ON THE GROWTH OF COSI2 AND COSI/SI HETEROSTRUCTURES ON SI(111) [J].

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VONKANEL, H .

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[9]

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[10]

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