ON THE GROWTH OF COSI2 AND COSI/SI HETEROSTRUCTURES ON SI(111)

被引：40

作者：

HENZ, J

OSPELT, M

VONKANEL, H

机构：

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 63卷 / 06期

关键词：

D O I：

10.1016/0038-1098(87)90268-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：445 / 449

页数：5

共 15 条

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[2] Carlson T. A., 1975, PHOTOELECTRON AUGER
[3] SILICON OVERGROWTH ON COSI2/SI(111) EPITAXIAL STRUCTURES - APPLICATION TO PERMEABLE BASE TRANSISTOR
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ROSENCHER, E
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 463 - 469
[4] HENSEL JC, 1986, MATER RES SOC S P, V54, P499
[5] HUNT BD, 1986, MATER RES SOC S P, V56, P151
[6] FORMATION OF UNIFORM SOLID-PHASE EPITAXIAL COSI2 FILMS BY PATTERNING METHOD
ISHIBASHI, K
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (08): : 912 - 917
[7] UNIFORMITY AND CRYSTALLINE QUALITY OF COSI2/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND REACTIVE DEPOSITION EPITAXY
KAO, YC
TEJWANI, M
XIE, YH
LIN, TL
WANG, KL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 596 - 599
[8] COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE
PIRRI, C
PERUCHETTI, JC
GEWINNER, G
DERRIEN, J
[J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3391 - 3397
[9] STUDY OF BALLISTIC TRANSPORT IN SI-COSI2-SI METAL BASE TRANSISTORS
ROSENCHER, E
BADOZ, PA
PFISTER, JC
DAVITAYA, FA
VINCENT, G
DELAGE, S
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 271 - 273
[10] DOUBLE HETEROEPITAXY IN THE SI (111)-COSI2-SI STRUCTURE
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ISHIWARA, H
FURUKAWA, S
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 203 - 205

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