GROWTH AND CHARACTERIZATION OF INDIUM-DOPED SILICON FOR EXTRINSIC IR-DETECTORS

被引：17

作者：

HOBGOOD, HM

BRAGGINS, TT

SOPIRA, MM

SWARTZ, JC

THOMAS, RN

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：14 / 23

页数：10

共 17 条

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THOMAS, RN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :2-10

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[6]

FRASER JC, 1977, 4 US ARM MISS COMM R, V1

[7]

Hobgood H. M., 1979, Neutron Transmutation Doping in Semiconductors, P65

[8] CONSTITUTIONAL SUPERCOOLING DURING CRYSTAL GROWTH FROM STIRRED MELTS .1. THEORETICAL [J].

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[9]

JONES CE, 1979, 1979 P JOINT M IRIS

[10] THE SOLUBILITY OF SILICON AND GERMANIUM IN GALLIUM AND INDIUM [J].

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BRODER, J .

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