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SURFACE DEPLETION AND INVERSION IN SEMICONDUCTORS WITH ARBITRARY DOPANT PROFILES
被引:6
作者
:
BARTELINK, DJ
论文数:
0
引用数:
0
h-index:
0
BARTELINK, DJ
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1980年
/ 37卷
/ 02期
关键词
:
D O I
:
10.1063/1.92101
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:220 / 223
页数:4
相关论文
共 13 条
[1]
EXACT FORMULATION OF MOS C-V PROFILING
[J].
BARTELINK, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
BARTELINK, DJ
;
TREMAIN, RE
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
TREMAIN, RE
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
:1831
-1831
[2]
THRESHOLD SHIFTS DUE TO NONUNIFORM DOPING PROFILES IN SURFACE CHANNEL MOSFETS
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BREWS, JR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
:1696
-1710
[3]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
[J].
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
;
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
:760
-+
[4]
N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM
[J].
BROWN, WL
论文数:
0
引用数:
0
h-index:
0
BROWN, WL
.
PHYSICAL REVIEW,
1953,
91
(03)
:518
-527
[5]
THRESHOLD VOLTAGE OF NONUNIFORMLY DOPED MOS STRUCTURES
[J].
DOUCET, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CATHOLIQUE LOUVAIN,INST ELECT,LAB PHYS & ELECTR ETAT SOLIDE,LOUVAIN 1348,BELGIUM
UNIV CATHOLIQUE LOUVAIN,INST ELECT,LAB PHYS & ELECTR ETAT SOLIDE,LOUVAIN 1348,BELGIUM
DOUCET, G
;
VANDEWIE.F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CATHOLIQUE LOUVAIN,INST ELECT,LAB PHYS & ELECTR ETAT SOLIDE,LOUVAIN 1348,BELGIUM
UNIV CATHOLIQUE LOUVAIN,INST ELECT,LAB PHYS & ELECTR ETAT SOLIDE,LOUVAIN 1348,BELGIUM
VANDEWIE.F
.
SOLID-STATE ELECTRONICS,
1973,
16
(03)
:417
-423
[6]
ONSET OF HEAVY INVERSION IN MOS DEVICES DOPED NONUNIFORMLY NEAR-SURFACE
[J].
FELTL, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,GESCHAFTSBEREICH DATENVERARBEITUNG,D-8000 MUNICH 80,FED REP GER
SIEMENS AG,GESCHAFTSBEREICH DATENVERARBEITUNG,D-8000 MUNICH 80,FED REP GER
FELTL, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
:288
-289
[7]
SURFACE SPACE-CHARGE CALCULATIONS FOR SEMICONDUCTORS
[J].
FRANKL, DR
论文数:
0
引用数:
0
h-index:
0
FRANKL, DR
.
JOURNAL OF APPLIED PHYSICS,
1960,
31
(10)
:1752
-1754
[8]
PHYSICAL THEORY OF SEMICONDUCTOR SURFACES
[J].
GARRETT, CGB
论文数:
0
引用数:
0
h-index:
0
GARRETT, CGB
;
BRATTAIN, WH
论文数:
0
引用数:
0
h-index:
0
BRATTAIN, WH
.
PHYSICAL REVIEW,
1955,
99
(02)
:376
-387
[9]
Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
[10]
CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
[J].
KINGSTON, RH
论文数:
0
引用数:
0
h-index:
0
KINGSTON, RH
;
NEUSTADTER, SF
论文数:
0
引用数:
0
h-index:
0
NEUSTADTER, SF
.
JOURNAL OF APPLIED PHYSICS,
1955,
26
(06)
:718
-720
←
1
2
→
共 13 条
[1]
EXACT FORMULATION OF MOS C-V PROFILING
[J].
BARTELINK, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
BARTELINK, DJ
;
TREMAIN, RE
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
TREMAIN, RE
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
:1831
-1831
[2]
THRESHOLD SHIFTS DUE TO NONUNIFORM DOPING PROFILES IN SURFACE CHANNEL MOSFETS
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BREWS, JR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
:1696
-1710
[3]
SI-SIO2 FAST INTERFACE STATE MEASUREMENTS
[J].
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
;
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(07)
:760
-+
[4]
N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM
[J].
BROWN, WL
论文数:
0
引用数:
0
h-index:
0
BROWN, WL
.
PHYSICAL REVIEW,
1953,
91
(03)
:518
-527
[5]
THRESHOLD VOLTAGE OF NONUNIFORMLY DOPED MOS STRUCTURES
[J].
DOUCET, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CATHOLIQUE LOUVAIN,INST ELECT,LAB PHYS & ELECTR ETAT SOLIDE,LOUVAIN 1348,BELGIUM
UNIV CATHOLIQUE LOUVAIN,INST ELECT,LAB PHYS & ELECTR ETAT SOLIDE,LOUVAIN 1348,BELGIUM
DOUCET, G
;
VANDEWIE.F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CATHOLIQUE LOUVAIN,INST ELECT,LAB PHYS & ELECTR ETAT SOLIDE,LOUVAIN 1348,BELGIUM
UNIV CATHOLIQUE LOUVAIN,INST ELECT,LAB PHYS & ELECTR ETAT SOLIDE,LOUVAIN 1348,BELGIUM
VANDEWIE.F
.
SOLID-STATE ELECTRONICS,
1973,
16
(03)
:417
-423
[6]
ONSET OF HEAVY INVERSION IN MOS DEVICES DOPED NONUNIFORMLY NEAR-SURFACE
[J].
FELTL, H
论文数:
0
引用数:
0
h-index:
0
机构:
SIEMENS AG,GESCHAFTSBEREICH DATENVERARBEITUNG,D-8000 MUNICH 80,FED REP GER
SIEMENS AG,GESCHAFTSBEREICH DATENVERARBEITUNG,D-8000 MUNICH 80,FED REP GER
FELTL, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
:288
-289
[7]
SURFACE SPACE-CHARGE CALCULATIONS FOR SEMICONDUCTORS
[J].
FRANKL, DR
论文数:
0
引用数:
0
h-index:
0
FRANKL, DR
.
JOURNAL OF APPLIED PHYSICS,
1960,
31
(10)
:1752
-1754
[8]
PHYSICAL THEORY OF SEMICONDUCTOR SURFACES
[J].
GARRETT, CGB
论文数:
0
引用数:
0
h-index:
0
GARRETT, CGB
;
BRATTAIN, WH
论文数:
0
引用数:
0
h-index:
0
BRATTAIN, WH
.
PHYSICAL REVIEW,
1955,
99
(02)
:376
-387
[9]
Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
[10]
CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
[J].
KINGSTON, RH
论文数:
0
引用数:
0
h-index:
0
KINGSTON, RH
;
NEUSTADTER, SF
论文数:
0
引用数:
0
h-index:
0
NEUSTADTER, SF
.
JOURNAL OF APPLIED PHYSICS,
1955,
26
(06)
:718
-720
←
1
2
→