OPTICAL CHARACTERIZATION OF INAS MONOLAYER STRUCTURES GROWN ON (113)A AND (001) GAAS SUBSTRATES

被引：19

作者：

MELENDEZ, J ^{[1
]}

MAZUELAS, A ^{[1
]}

DOMINGUEZ, PS ^{[1
]}

GARRIGA, M ^{[1
]}

ALONSO, MI ^{[1
]}

ARMELLES, G ^{[1
]}

TAPFER, L ^{[1
]}

BRIONES, F ^{[1
]}

机构：

[1] C N RICERA & SVILUPPO MAT, I-72023 MESAGNE, ITALY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.108561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study on structures consisting of one InAs monolayer in a GaAs matrix, grown on both (001) and (113)A GaAs substrates, is presented. The structures were grown simultaneously at low temperature by atomic layer molecular beam epitaxy, and were structurally characterized by the x-ray interference effect. Optical characterization was performed by means of piezoreflectance and photoreflectance. Observed InAs-related transitions can only be fitted by an envelope wave function model if a larger InAs segregation is assumed in the (113) sample than in the (001) sample, or, less plausible, the band offset is strongly direction dependent.

引用

收藏

页码：1000 / 1002

页数：3

相关论文

共 12 条

[1] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].

ASPNES, DE ;

HARBISON, JP ;

STUDNA, AA ;

FLOREZ, LT .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690

[2] SPECTROSCOPIC STUDY OF MONOLAYER INAS/GAAS SINGLE AND MULTIPLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BRANDT, O ;

CINGOLANI, R ;

TAPFER, L ;

SCAMARCIO, G ;

PLOOG, K .

SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (02) :147-150

[3] ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE) OF III-V COMPOUNDS - GROWTH MODES AND APPLICATIONS [J].

BRIONES, F ;

GONZALEZ, L ;

RUIZ, A .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (06) :729-737

[4] MODULATION SPECTROSCOPIES ON A GAAS INAS GAAS SINGLE-MONOLAYER STRUCTURE [J].

CASTRILLO, P ;

ARMELLES, G ;

RUIZ, A ;

BRIONES, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (10B) :L1784-L1786

[5] QUANTUM-WELL LASER WITH SINGLE INAS MONOLAYER IN ACTIVE REGION [J].

DOTOR, ML ;

HUERTAS, P ;

MELENDEZ, J ;

MAZUELAS, A ;

GARRIGA, M ;

GOLMAYO, D ;

BRIONES, F .

ELECTRONICS LETTERS, 1992, 28 (10) :935-937

[6] DEPENDENCE OF THE LIGHT-HOLE HEAVY-HOLE SPLITTING ON LAYER THICKNESS AND SUBSTRATE ORIENTATION IN GAAS-(GAAL)AS SINGLE QUANTUM WELLS [J].

ELKHALIFI, Y ;

GIL, B ;

MATHIEU, H ;

FUKUNAGA, T ;

NAKASHIMA, H .

PHYSICAL REVIEW B, 1989, 39 (18) :13533-13536

[7] PIEZO-OPTICAL EFFECTS IN GAAS WITH INTERSPERSED (211)-INAS LATTICE PLANES [J].

ILG, M ;

BRANDT, O ;

RUIZ, A ;

PLOOG, K .

PHYSICAL REVIEW B, 1992, 45 (15) :8825-8828

[8] SURFACE SEGREGATION OF 3RD-COLUMN IN GROUP III-V ARSENIDE COMPOUNDS - TERNARY ALLOYS AND HETEROSTRUCTURES [J].

MOISON, JM ;

GUILLE, C ;

HOUZAY, F ;

BARTHE, F ;

VANROMPAY, M .

PHYSICAL REVIEW B, 1989, 40 (09) :6149-6162

[9] MONOLAYER RESOLUTION BY MEANS OF X-RAY INTERFERENCE IN SEMICONDUCTOR HETEROSTRUCTURES [J].

TAPFER, L ;

OSPELT, M ;

VONKANEL, H .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) :1298-1301

[10] ULTRATHIN INAS/GAAS SINGLE QUANTUM-WELL STRUCTURES GROWN BY ATOMIC LAYER EPITAXY [J].

TISCHLER, MA ;

ANDERSON, NG ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1986, 49 (18) :1199-1200