ULTRATHIN INAS/GAAS SINGLE QUANTUM-WELL STRUCTURES GROWN BY ATOMIC LAYER EPITAXY

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2361 - 2367

[2] PHOTOLUMINESCENCE STUDY OF INTERFACE DEFECTS IN HIGH-QUALITY GAAS-GAALAS SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) : 1633 - 1640

[3] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 983 - 985

[5] PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 463 - 467

[6] KUO CP, 1985, APPL PHYS LETT, V47, P885

[7] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1161 - 1163

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] HIGH-QUALITY SINGLE GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 508 - 510

[10] MOLECULAR LAYER EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2361 - 2367

[2] PHOTOLUMINESCENCE STUDY OF INTERFACE DEFECTS IN HIGH-QUALITY GAAS-GAALAS SUPERLATTICES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) : 1633 - 1640

[3] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 983 - 985

[5] PHOTOLUMINESCENCE OF ALGAAS GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 463 - 467

[6] KUO CP, 1985, APPL PHYS LETT, V47, P885

[7] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1161 - 1163

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] HIGH-QUALITY SINGLE GAAS QUANTUM WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 508 - 510

[10] MOLECULAR LAYER EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200