ULTRATHIN INAS/GAAS SINGLE QUANTUM-WELL STRUCTURES GROWN BY ATOMIC LAYER EPITAXY

[11] ATOMIC LAYER EPITAXY OF CDTE ON THE POLAR-(111)A AND B(111)-SURFACES OF CDTE SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 67 (02) : 255 - 260

[12] IMPROVED GAAS ALGAAS QUANTUM-WELL HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 678 - 680

[13] THEORY OF PHOTOLUMINESCENCE LINE-SHAPE DUE TO INTERFACIAL QUALITY IN QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 805 - 807

[14] Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[15] IMPROVED UNIFORMITY OF EPITAXIAL INDIUM-BASED COMPOUNDS BY ATOMIC LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 274 - 276

[16] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1681 - 1683

[17] TISCHLER MA, UNPUB J CRYST GROWTH

[18] TISCHLER MA, 1986, THESIS N CAROLINA ST

[19] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 220 - 222

[20] LUMINESCENCE LINE-SHAPE BROADENING MECHANISMS IN GALNAS/ALLNAS QUANTUM WELLS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 991 - 993

[11] ATOMIC LAYER EPITAXY OF CDTE ON THE POLAR-(111)A AND B(111)-SURFACES OF CDTE SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 67 (02) : 255 - 260

[12] IMPROVED GAAS ALGAAS QUANTUM-WELL HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 678 - 680

[13] THEORY OF PHOTOLUMINESCENCE LINE-SHAPE DUE TO INTERFACIAL QUALITY IN QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 805 - 807

[14] Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[15] IMPROVED UNIFORMITY OF EPITAXIAL INDIUM-BASED COMPOUNDS BY ATOMIC LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 274 - 276

[16] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1681 - 1683

[17] TISCHLER MA, UNPUB J CRYST GROWTH

[18] TISCHLER MA, 1986, THESIS N CAROLINA ST

[19] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 220 - 222

[20] LUMINESCENCE LINE-SHAPE BROADENING MECHANISMS IN GALNAS/ALLNAS QUANTUM WELLS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 991 - 993