DETERMINATION OF BULK CARRIER LIFETIME IN LOW-DOPED REGION OF A SILICON POWER DIODE, BY METHOD OF OPEN CIRCUIT VOLTAGE DECAY

被引：23

作者：

BASSETT, RJ

FULOP, W

HOGARTH, CA

机构：

[1] WESTINGHOUSE BRAKE ENGLISH ELECT SEMICOND,CHIPPENHAM,ENGLAND

[2] BRUNEL UNIV,PHYS DEPT,KINGSTON LANE,UXBRIDGE,MIDDLESEX,ENGLAND

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1973年 / 35卷 / 02期

关键词：

D O I：

10.1080/00207217308938533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：177 / 192

页数：16

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