SPECTROPHOTOMETRIC EVALUATION OF PHOSPHORUS PROFILES IN SILICON

被引：14

作者：

LANZA, P ^{[1
]}

BULDINI, PL ^{[1
]}

机构：

[1] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

来源：

ANALYTICA CHIMICA ACTA | 1979年 / 104卷 / 01期

关键词：

D O I：

10.1016/S0003-2670(01)83823-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A new method for the determination of phosphorus concentration profiles in semiconductor silicon slices makes use of spectrophotometry for concentration measurements and anodic oxidation for sectioning. Silicon layers in the 5-50-nm range can be removed reproducibly. The profile determination of phosphorus doping is possible for concentrations as low as 1019 atoms P cm-3. Measurements of these profiles by the proposed procedure give excellent agreement with electrical evaluations. The method is simple and reliable, and expensive apparatus is not required. A medium-depth profile is normally completed in eight hours. © 1979.

引用

页码：139 / 144

页数：6

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