CONCENTRATION PROFILES OF IMPLANTED PHOSPHORUS IN SILICON

被引：9

作者：

BURKHARDT, F ^{[1
]}

MERTENS, A ^{[1
]}

WAGNER, C ^{[1
]}

机构：

[1] HUMBOLDT UNIV, SEKT PHYS, BEREICH ATOMSTOSSPROZESSE FESTKORPERPHYS, BERLIN, EAST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 22卷 / 01期

关键词：

D O I：

10.1002/pssa.2210220154

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K45 / K47

页数：3

共 12 条

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[5] RANGE AND ENERGY LOSS OF IMPLANTED IONS [J].

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[6]

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[7] THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) :134-+

[8]

GUSEV VM, 1971, DOKL AKAD NAUK SSSR+, V197, P319

[9] IMPURITY DISTRIBUTION PROFILES IN ION-IMPLANTED SILICON [J].

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JOHNSON, WS ;

GIBBONS, JF .

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[10] ION-IMPLANTED PHOSPHOROUS IN SILICON - PROFILES USING C-V ANALYSIS [J].

MOLINE, RA .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3553-&

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